? semiconductor components industries, llc, 2005 january, 2005 ? rev. 3 1 publication order number: mjd6039/d mjd6039 darlington power transistors dpak for surface mount applications designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (? ? 1? suffix) ? available on 16 mm tape and reel for automatic handling (?t4? suffix) ? monolithic construction with built ? in base ? emitter shunt resistors ? high dc current gain ? h fe = 2500 (typ) @ i c = 4.0 adc ? epoxy meets ul 94, v ? 0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v maximum ratings rating symbol max unit collector ? emitter voltage v ceo 80 vdc collector ? base voltage v cb 80 vdc emitter ? base voltage v eb 5 vdc collector current ? continuous collector current ? peak i c 4 8 adc base current i b 100 madc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation* @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 6.25 c/w thermal resistance, junction ? to ? ambient* r ja 71.4 c/w *these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 4 amperes 80 volts 20 watts marking diagram y = year ww = work week dpak case 369c style 1 yww j 6039 1 2 3 4 device package shipping ? ordering information MJD6039T4 dpak 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com
mjd6039 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ????? ????? ??? ??? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector ? emitter sustaining voltage (i c = 30 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 80 ??? ? ? ? ??? ? ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector ? cutoff current (v ce = 40 vdc, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ? ??? ? ? ? ??? 10 ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ??????????????????????? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 1 adc, v ce = 4 vdc) (i c = 2 adc, v ce = 4 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 1000 500 ??? ? ? ? ??? ? ? ??? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector ? emitter saturation voltage (i c = 2 adc, i b = 8 madc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ??? ? ? ? ??? 2.5 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? base ? emitter on voltage (i c = 2 adc, v ce = 4 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ? ??? ? ? ? ??? 2.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? small ? signal current gain (i c = 0.75 adc, v ce = 10 vdc, f = 1 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ??????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? ? ??? ? ? ? ??? 100 ??? ? ? ? ??? pf 1. pulse test: pulse width 300 s, duty cycle 2%. 0.04 0.2 2 0.1 0.06 0.4 1 4 i c , collector current (amp) v cc = 30 v i c /i b = 250 t, time (s) 2 1 0.8 0.6 0.4 0.2 t s t f figure 1. switching times test circuit figure 2. switching times t r i b1 = i b2 t j = 25 c t d @ v be(off) = 0 pnp npn 4 0.6 v 2 approx +8 v 0 8 k scope v cc ?30 v r c 51 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. 25 s t r , t f 10 ns duty cycle = 1% + 4 v r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 approx ?12 v tut r b d 1 120
mjd6039 http://onsemi.com 3 i c , collector current (amps) figure 3. thermal response figure 4. maximum rated forward biased safe operating area figure 5. power derating t, time or pulse width (ms) 1 0.01 1000 0.3 0.2 0.07 r(t), effective transient r jc(t) = r(t) r jc r jc = 6.25 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 thermal resistance (normalized) 0.7 1 v ce , collector?to?emitter voltage (volts) 0.3 100 5 2 0.5 0.2 bonding wire limit thermal limit second breakdown lim- it 10 50 2 0.1ms dc 0.1 1 3 7 10 0.5 0.1 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 50 100 200 300 500 30 20 70 0.2 single pulse d = 0.5 0.05 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t a surface mount 0.7 1ms 5ms t j = 150 c curves apply below rated v ceo 357 0.1 0.01 0.05 0.5ms t c typical electrical characteristics there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 6 and 7 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are va lid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. c, capacitance (pf) v r , reverse voltage (volts) c ib 0.04 30 1 4 10 40 t c = 25 c 200 10 50 70 100 0.1 2 6 20 20 pnp npn 0.6 0.4 0.2 0.06 figure 6. capacitance c ob
mjd6039 http://onsemi.com 4 v ce , collector?emitter voltage (volts) i c , collector current (amp) figure 7. dc current gain figure 8. collector saturation region figure 9. ?on? voltages 0.04 300 0.06 0.2 2 k 800 4 k h fe , dc current gain 3 k 0.1 0.6 25 c ?55 c 1 k 0.4 1 6 k 400 600 24 0.04 i c , collector current (amp) 1.4 1 v, voltage (volts) 2.2 1.8 0.6 0.2 0.06 0.2 2 0.1 0.6 0.4 1 4 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 25 1 3 1 20 50 100 i c = 0.5 a t j = 125 c v ce = 3 v t j = 125 c 1 a 2 a 4 a t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 3 v v ce(sat) @ i c /i b = 250 typical electrical characteristics 0.04 i c , collector current (amp) 0.06 0.2 0 0.1 0.6 0.4 1 ? 4.8 234 + 0.8 ? 4 ? 3.2 ? 2.4 ? 1.6 ? 0.8 figure 10. temperature coefficients v , temperature coefficients (mv/ c) *applied for i c /i b < h fe /3 25 c to 150 c ? 55 c to 25 c 25 c to 150 c 25 c to 150 c vc for v be vc for v ce(sat) 10 ?1 0 ?0.4 +0.2 +0.4 +0.6 ?0.6 ?0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base?emitter voltage (volts) , collector current (a) i c 10 3 10 2 10 1 10 0 reverse forward 10 5 figure 11. collector cut ? off region v ce = 30 v t j = 150 c 100 c 25 c figure 12. darlington schematic base emitter collector 8 k 60 npn mjd6039
mjd6039 http://onsemi.com 5 package dimensions dpak case 369c ? 01 issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ? t ? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 soldering footprint
mjd6039 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 mjd6039/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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